RJL6013DPE Overview
Preliminary Datasheet RJL6013DPE Silicon N Channel MOS FET High Speed Power Switching.
RJL6013DPE Key Features
- Built-in fast recovery diode
- Low on-resistance RDS(on) = 0.66 typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C)
- Low leakage current
- High speed switching
