RJL6013DPE Datasheet | Renesas

Preliminary Datasheet Silicon N Channel MOS FET High Speed Power Switching Features - Built-in fast recovery diode - Low on-resistance RDS(on) = 0.66  typ. (at ID = 5.5 A, VGS = 10 V, Ta = 25C) - Low leakage current - High speed switching R07DS0437EJ0200 (Previous: REJ03G1748-0100) Rev.2.00 Jun 16, 2011 Outline RENESAS Package code: PRSS0004AE-B (Package name LDPAK(S)-(1)) 4 D G 3 1. Gate 2. Drain 3. Source 4....