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RJQ6008DPM - IGBT/Diode

Renesas

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Datasheet Details

Part number: RJQ6008DPM
Manufacturer: Renesas ↗
File Size: 109.31 KB
Datasheet: RJQ6008DPM-Renesas.pdf
Description: IGBT/Diode

RJQ6008DPM Product details

Features

Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching Preliminary Datasheet R07DS0847EJ0100 Rev.1.00 Jul 17, 2012 Outline.

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