RJQ6008DPM datasheet, igbt/diode equivalent, Renesas

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Features and benefits

* Low collector to emitter saturation voltage VCE(sat) = 2.65 V typ. (IC = 25 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench.

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TAGS

RJQ6008DPM

IGBT

Diode

Renesas

Manufacturer

Renesas (https://www.renesas.com/)

Related datasheet

RJQ6008DPM Datasheet, Renesas

Features and benefits