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RJS6004TDPP-EJ - SiC Schottky Barrier Diode

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Features

  • New semiconductor material: Silicon Carbide Diode.
  • No reverse recovery / No forward recovery Outline.

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Datasheet Details

Part number RJS6004TDPP-EJ
Manufacturer Renesas
File Size 67.09 KB
Description SiC Schottky Barrier Diode
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RJS6004TDPP-EJ 600V - 10A - Diode SiC Schottky Barrier Diode Features • New semiconductor material: Silicon Carbide Diode • No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L) 12 Preliminary Datasheet R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 1 1. Cathode 2. Anode 2 Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Electrical Characteristics Symbol VRM IF IFSM Tj Tstg Item Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 10 60 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C (Ta = 25°C) Max Unit Test conditions 1.
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