RJU36B1WDPF
RJU36B1WDPF is Dual Diode manufactured by Renesas.
Features
- Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
- Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
- Low reverse current: IR = 1 μA max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
2, 4
1. Anode 2. Cathode 3. Anode 4. Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Maximum reverse voltage Continuous forward current Tc = 25°C
Tc = 100°C Peak surge forward current Junction to case thermal resistance Junction temperature
VRM IF Note1 IF Note1 IFSM Note1
θj-cd Tj Note2
360 10/20 5/10 40/80 4.17 175
V A A A °C/W °C
Storage temperature
Tstg
- 55 to +150
°C
Notes: 1. Per leg/device
2. Please use this device in the thermal conditions where the junction temperature does not exceed 175°C. IGBT Application Note is disclosed about reliability test and application condition up to Tj=175°C.
Electrical Characteristics
Item Forward voltage Reverse current Reverse recovery time
(Ta = 25°C)
Symbol Min
Typ
Max
Unit
Test conditions
VFNote1
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