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Renesas Electronics Components Datasheet

RJU36B1WDPF Datasheet

Dual Diode

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RJU36B1WDPF
360V - 20A - Dual Diode
Ultra Fast Recovery Diode
Preliminary Datasheet
R07DS1135EJ0300
Rev.3.00
Dec 06, 2013
Features
Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/μs)
Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
Low reverse current: IR = 1 μA max. (at VR = 360 V)
Outline
RENESAS Package code: PRSS0004AE-C
(Package name: LDPAK (S)-(2) )
4
123
2, 4
1
3
1. Anode
2. Cathode
3. Anode
4. Cathode
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Maximum reverse voltage
Continuous forward current Tc = 25°C
Tc = 100°C
Peak surge forward current
Junction to case thermal resistance
Junction temperature
VRM
IF Note1
IF Note1
IFSM Note1
θj-cd
Tj Note2
360
10/20
5/10
40/80
4.17
175
V
A
A
A
°C/W
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. Per leg/device
2. Please use this device in the thermal conditions where the junction temperature does not exceed 175°C.
IGBT Application Note is disclosed about reliability test and application condition up to Tj=175°C.
Electrical Characteristics
Item
Forward voltage
Reverse current
Reverse recovery time
(Ta = 25°C)
Symbol Min
Typ
Max
Unit
Test conditions
VFNote1
IRNote1
1.1
1.5
V IF = 10 A
1
μA VR = 360 V
trrNote1
40
ns IF = 10 A, di/dt = 100 A/μs
R07DS1135EJ0300 Rev.3.00
Dec 06, 2013
Page 1 of 3


Renesas Electronics Components Datasheet

RJU36B1WDPF Datasheet

Dual Diode

No Preview Available !

RJU36B1WDPF
Main Characteristics
Forward Current vs. Forward Voltage (Typical)
100
10
Ta = 150°C
1
25°C
0.1
0
0.4
0.8
1.2
1.6
Forward Voltage VF (V)
Capacitance vs. Reverse Voltage (Typical)
1000
f = 1 MHz
Ta = 25°C
100
Preliminary
Reverse Recovery Time vs.di/dt (Typical)
60
50
40
30
20
10
IF = 10 A
Ta = 25°C
0
0
40 80
120 160 200
di/dt (A/μs)
10
1
0.1
1
10
100 1000
Reverse Voltage VR (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
Tc = 25°C
1 D=1
0.5
0.2
0.1
0.05
0.1
0.02
0.01
1 shot pulse
0.01
100 μ
1m
10 m
θch – c(t) = γs (t) • θj – c
θch – c = 4.17 °C/W, Tc = 25°C
100 m
1
10
100
Pulse Width PW (s)
R07DS1135EJ0300 Rev.3.00
Dec 06, 2013
Page 2 of 3



Part Number RJU36B1WDPF
Description Dual Diode
Maker Renesas
Total Page 3 Pages
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RJU36B1WDPF Datasheet PDF





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