Description
The RMQS3A1836DGBA is a 524,288-word by 36-bit and the RMQS3A1818DGBA is a 1,048,576-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell.
Features
- Power Supply z 1.8 V for core (VDD), 1.4 V to VDD for I/O (VDDQ).
- Clock z z z z
z
Fast clock cycle time for high bandwidth Two input clocks (K and /K) for precise DDR timing at clock rising edges only Two input clocks for output data (C and /C) to minimize clock skew and flight time mismatches Two output echo clocks (CQ and /CQ) simplify data capture in high-speed systems Clock-stop capability with μs restart.
- I/O z z z z z
Separate independent read and write data.
RMQS3A1818DGBA Datasheet
