RQJ0201UGDQA Description
RQJ0201UGDQA Silicon P Channel MOS FET Power Switching.
RQJ0201UGDQA Key Features
- Low on-resistance RDS(on) = 53 mΩ typ (VGS = -4.5 V, ID = -1.8 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
- Part: RQJ0201UGDQA
- Manufacturer: Renesas (official site)
- Size: 123.19 KB
