RQJ0202VGDQA Overview
Preliminary Datasheet RQJ0202VGDQA Silicon P Channel MOS FET Power Switching.
RQJ0202VGDQA Key Features
- Low on-resistance RDS(on) = 83 mΩ typ (VGS = -4.5 V, ID = -1.4 A)
- Low drive current
- High speed switching
- 2.5 V gate drive R07DS0291EJ0500 Rev.5.00 Jan 10, 2014
