RQJ0203WGDQA Description
RQJ0203WGDQA Silicon P Channel MOS FET Power Switching.
RQJ0203WGDQA Key Features
- Low on-resistance RDS(on) = 142 mΩ typ (VGS = -4.5 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
- Part: RQJ0203WGDQA
- Manufacturer: Renesas (official site)
- Size: 123.25 KB
