RQJ0204XGDQA Description
RQJ0204XGDQA Silicon P Channel MOS FET Power Switching.
RQJ0204XGDQA Key Features
- Low on-resistance RDS(on) = 219 mΩ typ (VGS = -4.5 V, ID = -0.8 A)
- Low drive current
- High speed switching
- 2.5 V gate drive
- Part: RQJ0204XGDQA
- Manufacturer: Renesas (official site)
- Size: 123.47 KB
