RQJ0302NGDQA Description
RQJ0302NGDQA Silicon P Channel MOS FET Power Switching.
RQJ0302NGDQA Key Features
- Low on-resistance RDS(on) = 138 mΩ typ (VGS = -10 V, ID = -1.1 A)
- Low drive current
- High speed switching
- 4.5 V gate drive
- Part: RQJ0302NGDQA
- Manufacturer: Renesas (official site)
- Size: 119.12 KB
