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RQJ0302NGDQA - Silicon P-Channel MOS FET

General Description

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Key Features

  • Low on-resistance RDS(on) = 138 mΩ typ (VGS =.
  • 10 V, ID =.
  • 1.1 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.

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Full PDF Text Transcription for RQJ0302NGDQA (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for RQJ0302NGDQA. For precise diagrams, and layout, please refer to the original PDF.

RQJ0302NGDQA Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 138 mΩ typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switc...

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typ (VGS = –10 V, ID = –1.1 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 Note: Marking is “NG”. Preliminary Datasheet R07DS0294EJ0600 Rev.6.00 Jan 10, 2014 3 D G 1. Source 2 2. Gate 3. Drain S 1 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body - drain diode reverse drain current Channel dissipation VDSS VGSS ID ID(Pulse) Note1 IDR Pch Note2 Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board

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