RQJ0305EQDQS Description
RQJ0305EQDQS Silicon P Channel MOS FET Power Switching.
RQJ0305EQDQS Key Features
- Low gate drive VDSS : -30 V and 2.5 V gate drive
- Low drive current
- High speed switching
- Small traditional power package (UPAK)
- Part: RQJ0305EQDQS
- Manufacturer: Renesas (official site)
- Size: 104.14 KB
