RQJ0306FQDQS Description
RQJ0306FQDQS Silicon P Channel MOS FET Power Switching.
RQJ0306FQDQS Key Features
- Low gate drive VDSS : -30 V and 2.5 V gate drive
- Low drive current
- High speed switching
- Small traditional power package (UPAK)
- Part: RQJ0306FQDQS
- Manufacturer: Renesas (official site)
- Size: 106.52 KB
