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RQJ0601DGDQS - Silicon P-Channel MOS FET

Key Features

  • Low on-resistance RDS(on) = 124 mΩ typ (VGS =.
  • 10 V, ID =.
  • 1.4 A).
  • Low drive current.
  • High speed switching.
  • 4.5 V gate drive Outline.

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RQJ0601DGDQS Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 124 mΩ typ (VGS = –10 V, ID = –1.4 A) • Low drive current • High speed switc...

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typ (VGS = –10 V, ID = –1.4 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 Note: Marking is “DG”. REJ03G1266-0300 Rev.3.00 Jun 05, 2006 2, 4 D 1. Gate 1 G 2. Drain 3. Source 4. Drain S 3 *UPAK is a trademark of Renesas Technology Corp. Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID Note1 (pulse) Body - drain diode reverse drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note1 (pulse) Channel temperature Tch Storage temperat

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