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UPA2210T1M Datasheet P-CHANNEL MOS FET

Manufacturer: Renesas

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General Description

The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Overview

DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR.

Key Features

  • Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =.
  • 2.5 V, ID =.
  • 3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =.
  • 1.8 V, ID =.
  • 3.6 A).
  • Built-in gate protection diode.
  • 1.8 V Gate drive available.

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