UPA2210T1M Features
* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =
* 4.5 V, ID =
* 7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =
* 2.5 V, ID =
* 3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =
* 1.8 V, ID =
* 3.6 A)
* Built-in gate protection diode
* 1.8 V Ga
Datasheet Details
UPA2210T1M
294.92 KB
P-channel mos fet.
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Stock and price
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Rochester Electronics LLC
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| UPA2210T1M-T1-AT |
| 0 In Stock |
| Qty : 351 units |
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Unit Price : $0.86
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