UPA2210T1M Datasheet - Renesas

P-CHANNEL MOS FET

* Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =

* 4.5 V, ID =

* 7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =

* 2.5 V, ID =

* 3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =

* 1.8 V, ID =

* 3.6 A)

* Built-in gate protection diode

* 1.8 V Ga

UPA2210T1M

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P-channel mos fet.

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UPA2210T1M P-CHANNEL MOS FET Renesas

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