DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2210T1M
P-CHANNEL MOS FET
FOR SWITCHING
DESCRIPTION
The μ PA2210T1M is P-channel MOS Field Effect Transistor designed
for power management applications of portable equipments, such as
load switch.
FEATURES
• Low on-state resistance
RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A)
RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A)
RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID = −3.6 A)
• Built-in gate protection diode
• −1.8 V Gate drive available
ORDERING INFORMATION
PART NUMBER
μ PA2210T1M-T1-AT Note
μ PA2210T1M-T2-AT Note
PACKING
8 mm embossed taping
3000 p/reel
PACKAGE
8-pin VSOF (1629)
0.011 g TYP.
Note Pb-free (This product does not contain Pb in external electrode and
other parts.)
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.145±0.05
0 to 0.025
1
0.32±0.05
4
0.05 M S A
S 0.05 S
1, 2, 3, 6, 7, 8: Drain
4 : Gate
5 : Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
VDSS
−20 V
Gate to Source Voltage (VDS = 0 V)
VGSS
m8 V
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 5 sec) Note2
ID(DC)
ID(pulse)
PT1
PT2
m7.2
m28.8
1.1
2.5
A
A
W
W
Channel Temperature
Tch 150 °C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19451EJ1V0DS00 (1st edition)
Date Published September 2008 NS
Printed in Japan
2008
