UPA2521 Datasheet - Renesas

MOS FIELD EFFECT TRANSISTOR

* Low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = 10 V, ID = 8.0 A) RDS(on)2 = 25 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A)

* Built-in gate protection diode

* Small and surface mount package (8-pin VSOF (2429))

* Pb-free (This product does not contain Pb in external el

UPA2521

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Mos field effect transistor.

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UPA2521 MOS FIELD EFFECT TRANSISTOR Renesas

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