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UPA2719AGR Datasheet P-channel Power Mos Fet

Manufacturer: Renesas

Overview: DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2719AGR SWITCHING P-CHANNEL POWER MOS.

General Description

The μ PA2719AGR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook puters and Lithium-Ion battery protection circuit.

PACKAGE DRAWING (Unit: mm) 85 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain

Key Features

  • Low on-state resistance RDS(on)1 = 13 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 5.0 A) RDS(on)2 = 20.9 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 5.0 A).
  • Low input capacitance Ciss = 2010 pF TYP.
  • Built-in gate protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. 14 5.37 MAX. 6.0 ±0.3 4.4 +0.10.
  • 0.05 0.15 1.27 0.78 MAX. 0.40 +0.10.
  • 0.05 0.12 M 0.5 ±0.2 0.8 0.10.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
NEC Logo UPA2719GR SWITCHING N- AND P-CHANNEL POWER MOS FET NEC

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