UPA2739T1A datasheet, mosfet equivalent, Renesas

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Features and benefits

* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A) ⎯ RDS(on) = 5.7 mΩ MAX. (VGS = −4.5 V, ID = −23 A)
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Application

Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A.

Description

The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications. Features
* VDSS = −30 V (TA = 25°C)
* Low on-state resistance ⎯ RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A) ⎯ RDS(on) = 5.7 mΩ MA.

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