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Renesas Electronics Components Datasheet

UPA2821T1L Datasheet

MOS FIELD EFFECT TRANSISTOR

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UPA2821T1L pdf
μPA2821T1L
MOS FIELD EFFECT TRANSISTOR
PreliminaryData Sheet
R07DS0753EJ0100
Rev.1.00
May 25, 2012
Description
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a
notebook computer and Lithium-Ion battery protection circuit.
Features
VDSS = 30 V (TA = 25°C)
Low on-state resistance
RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
4.5 V Gate-drive available
Small surface mount package (8-pin HVSON (3333))
Pb-free, Halogen Free
Ordering Information
Part No.
Lead Plating
Packing
Package
μPA2821T1L-E1-AT 1
Pure Sn (Tin)
Tape 3000 p/reel 8-pin HVSON (3333)
μPA2821T1L-E2-AT 1
typ. 0.028 g
Note: 1. Pb-free (This product does not contain Pb in external electrode and other parts.)
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) 1
Total Power Dissipation 2
Total Power Dissipation (PW = 10 sec) 2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current 3
Signal Avalanche Energy 3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
30
±20
±26
±104
1.5
3.8
52
150
55 to +150
18
32.4
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Channel to Case (Drain) Thermal Resistance Rth(ch-C)
83.3
2.4
°C/W
°C/W
Notes: 1. PW 10 μs, Duty Cycle 1%
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 0 V, L = 100 μH
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 1 of 6


Renesas Electronics Components Datasheet

UPA2821T1L Datasheet

MOS FIELD EFFECT TRANSISTOR

No Preview Available !

UPA2821T1L pdf
μPA2821T1L
Electrical Characteristics (TA = 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance 1
Drain to Source On-state
Resistance 1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Symbol
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
MIN.
1.0
14
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage 1
Reverse Recovery Time
Reverse Recovery Charge
Note: 1. Pulsed
QGS
QGD
VF(S-D)
trr
Qrr
TYP.
3.0
4.9
2490
820
740
29
69
98
54
51
32
4
22
0.9
49
41
MAX.
1
±10
2.5
3.8
10.5
Chapter Title
Unit
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
nC
V
ns
nC
Test Conditions
VDS = 30 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
VDS = 10 V, ID = 1 mA
VDS = 5 V, ID = 6.5 A
VGS = 10 V, ID = 26 A
VGS = 4.5 V, ID = 6.5 A
VDS = 10 V,
VGS = 0 V,
f = 1 MHz
VDD = 15 V, ID = 13 A,
VGS = 10 V,
RG = 10 Ω
VGS = 10 V,
VGS = 5 V
VDD = 15 V,
ID = 26 A
IF = 26 A, VGS = 0 V
IF = 26 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
R07DS0753EJ0100 Rev.1.00
May 25, 2012
Page 2 of 6


Part Number UPA2821T1L
Description MOS FIELD EFFECT TRANSISTOR
Maker Renesas
Total Page 8 Pages
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