UPA2821T1L transistor equivalent, mos field effect transistor.
* VDSS = 30 V (TA = 25°C)
* Low on-state resistance
⎯ RDS(on) = 3.8 mΩ MAX. (VGS = 10 V, ID = 26 A)
* 4.5 V Gate-drive available
* Small surface mount pac.
of a notebook computer and Lithium-Ion battery protection circuit.
Features
* VDSS = 30 V (TA = 25°C)
* Low on-s.
The μPA2821T1L is N-channel MOS Field Effect Transistor designed for power management applications of a notebook computer and Lithium-Ion battery protection circuit.
Features
* VDSS = 30 V (TA = 25°C)
* Low on-state resistance
⎯ RDS(on) = 3.8.
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