UPD5750T7D - SiGe BiCMOS

Product Overview

Renesas

Part number	UPD5750T7D
Manufacturer	Renesas
File Size	319.30 KB
Description	SiGe BiCMOS
Datasheet	UPD5750T7D Datasheet
Additional preview pages of the UPD5750T7D datasheet.

The μPD5750T7D is a low noise wideband amplifier IC mainly designed for the portable digital TV application.

This IC exhibits low noise figure and high power gain characteristics.

Low voltage operation.
Low mode control voltage.
Low current consumption.
: VCC = 1.8 V TYP. : Vcont (H) = 1.0 V to VCC, Vcont (L) = 0 to 0.4 V : ICC = 3.1 mA TYP. @VCC = 1.8 V (LNA-mode) : ICC = 1 μA MAX. @VCC = 1.8 V (Bypass-mode) Low noise : NF = 1.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : NF = 1.4 dB TYP. @VCC = 1.8 V, f = 770 MHz High gain : GP = 13.5 dB TYP. @VCC = 1.8 V, f = 470 MHz (LNA-mode) : GP = 12.5.

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Published: Nov 10, 2013 |