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UPD5758T6J Datasheet, Renesas

UPD5758T6J Datasheet, Renesas

UPD5758T6J

datasheet Download (Size : 197.02KB)

UPD5758T6J Datasheet

UPD5758T6J amplifier

low noise and high gain amplifier.

UPD5758T6J

datasheet Download (Size : 197.02KB)

UPD5758T6J Datasheet

UPD5758T6J Features and benefits

UPD5758T6J Features and benefits


* Low noise
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*
*
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* : NV = −101 dBV TYP. @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −102 dBV TYP. @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ .

UPD5758T6J Application

UPD5758T6J Application


* Microphone, Sensor etc. ORDERING INFORMATION Part Number μPD5758T6J-E4 Order Number μPD5758T6J-E4-A Package 3-pin.

UPD5758T6J Description

UPD5758T6J Description

R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. T.

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TAGS

UPD5758T6J
Low
Noise
and
High
Gain
Amplifier
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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