UPD5758T6J
Description
R09DS0017EJ0100 Rev.1.00 Apr 18, 2011 The μPD5758T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
Key Features
- Low noise - - - - - - : NV = -101 dBV TYP
- @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : NV = -102 dBV TYP
- @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +5.7 dB TYP
- @VDD = 1.5 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +7.7 dB TYP
- @VDD = 1.5 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 1.5 pF TYP
- @VDD = 1.5 V, RL = 2.2 kΩ Low consumption current : IDD = 190 μA TYP
