UPD5759T6J
Description
R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.
Key Features
- Low noise - - - - - - : NV = -98 dBV TYP
- @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = -99 dBV TYP
- @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP
- @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP
- @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Low input capacitance : Cinput = 2.0 pF TYP
- @VDD = 2.0 V, RL = 2.2 kΩ Low consumption current : IDD = 310 μA TYP
