UPD5759T6J datasheet by Renesas.
| Part number | UPD5759T6J |
|---|---|
| Datasheet | UPD5759T6J_Renesas.pdf |
| File Size | 216.59 KB |
| Manufacturer | Renesas |
| Description | Low Noise and High Gain Amplifier |
|
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R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. The package is a 3-pin thin-type lead-less minimold, suitable for high-density surface mounting.
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