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UPD5759T6J Datasheet, Renesas

UPD5759T6J Datasheet, Renesas

UPD5759T6J

datasheet Download (Size : 216.59KB)

UPD5759T6J Datasheet

UPD5759T6J amplifier equivalent, low noise and high gain amplifier.

UPD5759T6J

datasheet Download (Size : 216.59KB)

UPD5759T6J Datasheet

Features and benefits


* Low noise
*
*
*
*
*
* : NV = −98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV = −99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ Hi.

Application


* Microphone, Sensor etc. ORDERING INFORMATION Part Number μPD5759T6J-E4 Order Number μPD5759T6J-E4-A Package 3-pin.

Description

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone. This device exhibits low noise and high voltage gain characteristics. T.

Image gallery

UPD5759T6J Page 1 UPD5759T6J Page 2 UPD5759T6J Page 3

TAGS

UPD5759T6J
Low
Noise
and
High
Gain
Amplifier
Renesas

Manufacturer


Renesas (https://www.renesas.com/)

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