ZSPM9010 Datasheet | Renesas

Description The ZSPM9010 Dr MOS is a fully optimized, ultrapact, integrated MOSFET plus driver power stage solution for high-current, high-frequency, synchronous buck DC-DC applications. The ZSPM9010 incorporates a driver IC, two power MOSFETs, and a bootstrap Schottky diode in a thermally enhanced, ultra-pact PQFN40 package (6mmx6mm). With an integrated approach, the ZSPM9010’s plete switching power stage is optimized for driver and MOSFET dynamic performance, system inductance, and power MOSFET RDS(ON). It uses innovative high-performance MOSFET technology, which dramatically reduces switch ringing, eliminating the snubber circuit in most buck converter applications. An innovative driver IC with reduced dead times and propagation delays further enhances performance. A thermal warning function (THWN) warns of potential over-temperature situations. The ZSPM9010 also incorporates features such as Skip Mode (SMOD) for improved light-load efficiency with a tri-state 3.3V pulse-width modulation (PWM) input for patibility with a wide range of PWM controllers. The ZSPM9010 Dr MOS is patible with IDT’s ZSPM1000, a leading-edge configurable digital power-management system controller for nonisolated point-of-load (POL) supplies. Benefits - Fully optimized system efficiency: >93% peak - Clean switching waveforms with minimal ringing - 72% space-saving pared to conventional discrete solutions - Optimized for use with IDT’s ZSPM1000 true digital PWM controller Features - Based on the Intel® 4.0 Dr MOS standard - High-current handling: up to 50A - High-performance copper-clip package - Tri-state 3.3V PWM input driver - Skip Mode (low-side gate turn-off) input (SMOD#) - Warning flag for over-temperature conditions - Driver output disable function (DISB# pin) - Internal pull-up and pull-down for SMOD# and DISB# inputs, respectively - Integrated Schottky diode technology in the low-side MOSFET - Integrated bootstrap Schottky diode - Adaptive gate drive timing for shoot-through...