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Renesas Electronics Components Datasheet

uPA2550 Datasheet

DUAL P-CHANNEL MOSFET

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uPA2550 pdf
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2550
DUAL P-CHANNEL MOSFET
FOR SWITCHING
DESCRIPTION
The μ PA2550 is dual P-channel MOSFETs designed for power
management applications of portable equipments, such as load
switch.
Dual P-channel MOSFETs are assembled in one package, to
contribute minimize the equipments.
PACKAGE DRAWING (Unit: mm)
2.9±0.1
0.65
8
5
A
0.17±0.05
0 to 0.025
FEATURES
1.8 V drive available
Low on-state resistance
RDS(on)1 = 40 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A)
RDS(on)2 = 60 mΩ MAX. (VGS = 2.5 V, ID = 2.5 A)
RDS(on)3 = 93 mΩ MAX. (VGS = 1.8 V, ID = 2.5 A)
Built-in gate protection diode
Small and surface mount package (8-pin VSOF (2429))
1
0.32±0.05
4
0.05 M S A
S
1: Source1
2: Gate1
3: Source2
4: Gate2
5, 6: Drain2
7, 8: Drain1
ORDERING INFORMATION
PART NUMBER
μ PA2550T1H-T1-AT Note
μ PA2550T1H-T2-AT Note
LEAD PLATING
Pure Sn
PACKING
8 mm embossed taping
3000 p/reel
PACKAGE
8-pin VSOF (2429)
Note Pb-free (This product does not contain Pb in the external electrode and other parts.)
Marking: 2550
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19179EJ1V0DS00 (1st edition)
Date Published March 2008 NS
Printed in Japan
2008


Renesas Electronics Components Datasheet

uPA2550 Datasheet

DUAL P-CHANNEL MOSFET

No Preview Available !

uPA2550 pdf
μ PA2550
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation (1 unit, 5 s) Note2
Total Power Dissipation (2 units, 5 s) Note2
ID(DC)
ID(pulse)
PT1
PT2
Channel Temperature
Tch
Storage Temperature
Tstg
12
m8
m5.0
m20
1.5
2.2
150
55 to +150
V
V
A
A
W
W
°C
°C
Notes 1. PW 10 μs, Duty Cycle 1%
2. Mounted on FR-4 board of 25.4 mm x 25.4 mm x 0.8 mmt
EQUIVALENT CIRCUIT (1/2)
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
2 Data Sheet G19179EJ1V0DS


Part Number uPA2550
Description DUAL P-CHANNEL MOSFET
Maker Renesas
Total Page 6 Pages
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