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uPA2755AGR - SWITCHING N-CHANNEL POWER MOS FET

General Description

The μ PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.

Key Features

  • Dual chip type.
  • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A).
  • Low input capacitance Ciss = 650 pF TYP.
  • Built-in G-S protection diode.
  • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN.

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Datasheet Details

Part number uPA2755AGR
Manufacturer Renesas
File Size 207.54 KB
Description SWITCHING N-CHANNEL POWER MOS FET
Datasheet download datasheet uPA2755AGR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2755AGR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The μ PA2755AGR is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers. FEATURES • Dual chip type • Low on-state resistance RDS(on)1 = 18 mΩ MAX. (VGS = 10 V, ID = 4.0 A) RDS(on)2 = 29 mΩ MAX. (VGS = 4.5 V, ID = 4.0 A) • Low input capacitance Ciss = 650 pF TYP. • Built-in G-S protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. PACKAGE DRAWING (Unit: mm) 85 14 5.37 MAX. 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4 0.8 +0.10 –0.05 0.15 1.27 0.78 MAX. 0.40 +0.10 –0.05 0.12 M 0.5 ±0.2 0.