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uPA2791GR - SWITCHING N- AND P-CHANNEL POWER MOS FET

General Description

Transistors designed for switching application.

Key Features

  • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 3.0 A) RDS(on)2 = 110 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 3.0 A).
  • Low gate charge N-channel QG = 10 nC TYP. (VGS = 10 V) P-channel QG = 8.3 nC TYP. (VGS =.
  • 10 V).
  • Built-in gate protection diode.
  • Small and surface mount package (Power SOP8) 1.8.

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Datasheet Details

Part number uPA2791GR
Manufacturer Renesas
File Size 376.88 KB
Description SWITCHING N- AND P-CHANNEL POWER MOS FET
Datasheet download datasheet uPA2791GR Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2791GR SWITCHING N- AND P-CHANNEL POWER MOS FET DESCRIPTION The μ PA2791GR is N- and P-channel MOS Field Effect Transistors designed for switching application. FEATURES • Low on-state resistance N-channel RDS(on)1 = 36.0 mΩ MAX. (VGS = 10 V, ID = 3.0 A) RDS(on)2 = 50.0 mΩ MAX. (VGS = 4.5 V, ID = 3.0 A) P-channel RDS(on)1 = 82 mΩ MAX. (VGS = −10 V, ID = −3.0 A) RDS(on)2 = 110 mΩ MAX. (VGS = −4.5 V, ID = −3.0 A) • Low gate charge N-channel QG = 10 nC TYP. (VGS = 10 V) P-channel QG = 8.3 nC TYP. (VGS = −10 V) • Built-in gate protection diode • Small and surface mount package (Power SOP8) 1.8 MAX. 1.44 0.05 MIN. PACKAGE DRAWING (Unit: mm) 85 N-channel 1 : Source 1 2 : Gate 1 7, 8 : Drain 1 P-channel 3 : Source 2 4 : Gate 2 5, 6 : Drain 2 14 5.