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2SK2869L - Silicon N Channel MOS FET

Datasheet Summary

Features

  • Low on-resistance RDS = 0.033 Ω typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline.

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Datasheet Details

Part number 2SK2869L
Manufacturer Renesas Technology
File Size 130.87 KB
Description Silicon N Channel MOS FET
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www.DataSheet4U.com 2SK2869(L), 2SK2869(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1037-0200 (Previous: ADE-208-570) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS = 0.033 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK(L)-(2)) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK(S)) 4 G 1 2 3 D 1. Gate 2. Drain 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 8 2SK2869(L), 2SK2869(S) Absolute Maximum Ratings www.DataSheet4U.
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