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Renesas Electronics Components Datasheet

2SK2869L Datasheet

Silicon N Channel MOS FET

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2SK2869(L), 2SK2869(S)
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Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
RDS = 0.033 typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
REJ03G1037-0200
(Previous: ADE-208-570)
Rev.2.00
Sep 07, 2005
RENESAS Package code: PRSS0004ZD-B
(Package name: DPAK(L)-(2))
4
RENESAS Package code: PRSS0004ZD-C
(Package name: DPAK(S))
4D
12 3
G
1
23
S
1. Gate
2. Drain
3. Source
4. Drain
Rev.2.00 Sep 07, 2005 page 1 of 8


Renesas Electronics Components Datasheet

2SK2869L Datasheet

Silicon N Channel MOS FET

No Preview Available !

2SK2869(L), 2SK2869(S)
Absolute Maximum Ratings
www.DataSheet4U.com
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1 %
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Symbol
VDSS
VGSS
ID
ID(pulse)*1
IDR
IAP*3
EAR*3
Pch*2
Tch
Tstg
Ratings
60
±20
20
80
20
20
34
30
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward voltage
Body to drain diode reverse
recovery time
Note: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VDF
trr
Min
60
±20
1.5
10
Typ
0.033
0.055
16
740
380
140
10
110
105
120
1.0
40
Max
±10
10
2.5
0.045
0.07
Unit
V
V
µA
µA
V
S
pF
pF
pF
ns
ns
ns
ns
V
V
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
ID = 1 mA, VDS = 10 V
ID = 10 A, VGS = 10 V*4
ID = 10 A, VGS = 4 V*4
ID = 10 A, VDS = 10 V*4
VDS = 10 V, VGS = 0,
f = 1 MHz
ID = 10 A, VGS = 10 V,
RL = 3
IF = 20 A, VGS = 0
IF = 20 A, VGS = 0
diF/ dt = 50A/µs
Rev.2.00 Sep 07, 2005 page 2 of 8


Part Number 2SK2869L
Description Silicon N Channel MOS FET
Maker Renesas Technology
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2SK2869L Datasheet PDF






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