BCR08AM-12 Datasheet | Renesas

Features - IT (RMS) : 0.8 A - VDRM : 600 V .. - IRGTI, IRGTⅢ : 5 m A - Planar Passivation Type Outline TO-92 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Electric fan, air cleaner, and other general purpose control applications Maximum Ratings Parameter Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage Note1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V Rev.1.00, Aug.20.2004, page 1 of 6 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass .. Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg - Ratings 0.8 8 0.26 1 0.1 6 0.5 - 40 to +125 - 40 to +125 0.23 Unit A A A2s W W V A °C °C g Conditions mercial frequency, sine full wave 360° conduction, Tc = 56°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Gate trigger current Note2 ΙΙ ΙΙΙ ΙΙ ΙΙΙ Symbol IDRM VTM VRGTΙ VRGTΙΙΙ IRGTΙ IRGTΙΙΙ Min. - - - - - - Typ. - - - - - - Max. 1.0 2.0 2.0 2.0 5 5 Unit m A V V V m A m A Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 1.2 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Gate non-trigger voltage VGD 0.1 - - V Tj = 125°C, VD = 1/2 VDRM Thermal resistance Rth (j-c) - - 60 °C/W Junction to case Note3 Critical-rate of rise of off-state (dv/dt)c 0.5 - - V/µs Tj = 125°C mutating voltage Note4 Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case. 4. Test conditions of the critical-rate of rise of off-state mutating voltage is shown in the table...