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Renesas Electronics Components Datasheet

BCR08AS-12 Datasheet

TRIAC

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BCR08AS-12
Triac
Low Power Use
Features
IT (RMS) : 0.8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT : 5 mA
IFGT : 10 mA
Outline
REJ03G0292-0200
Rev.2.00
Mar 22, 2007
Non-Insulated Type
Planar Passivation Type
Completed Pb Free
RENESAS Package code: PLZZ0004CA-A
(Package name: UPAK)
3
2
1
4
RENESAS Package code: PLZZ0004CB-A
(Package name: SOT-89)
4
1
2
3
2, 4
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Hybrid IC, solid state relay, electric fan, washing machine, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12 (Mark BF)
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
0.8
8
0.26
1
0.1
10
1
– 40 to +125
– 40 to +125
50
Unit
A
A
A2s
W
W
V
A
°C
°C
mg
Conditions
Commercial frequency, sine full wave
360° conduction, Ta = 40°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Page 1 of 7


Renesas Electronics Components Datasheet

BCR08AS-12 Datasheet

TRIAC

No Preview Available !

BCR08AS-12
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0 mA Tj = 125°C, VDRM applied
On-state voltage
VTM — — 2.0 V Tc = 25°C, ITM = 1.2 A,
Instantaneous measurement
Gate trigger voltageNote2
Ι VFGTΙ
2.0
V Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ VRGTΙ
2.0
V RG = 330
ΙΙΙ VRGTΙΙΙ
2.0
V
ΙV VFGTΙΙΙ
2.0
V
Gate trigger currentNote2 Ι IFGTΙ — —
5 mA Tj = 25°C, VD = 6 V, RL = 6 ,
ΙΙ IRGTΙ — —
5 mA RG = 330
ΙΙΙ IRGTΙΙΙ
5 mA
ΙV IFGTΙΙΙ
10 mA
Gate non-trigger voltage
Thermal resistance
VGD 0.1 — — V Tj = 125°C, VD = 1/2 VDRM
Rth (j-a)
65 °C/W Junction to ambientNote3
Critical-rate of rise of off-state
(dv/dt)c
0.5
— V/µs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Soldering with ceramic plate (25 mm × 25 mm × t0.7 mm).
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 0.4 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G0292-0200 Rev.2.00 Mar 22, 2007
Page 2 of 7


Part Number BCR08AS-12
Description TRIAC
Maker Renesas Technology
Total Page 8 Pages
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