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Renesas Electronics Components Datasheet

BCR10PM-12LA Datasheet

Triac

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BCR10PM-12LA
Triac
Medium Power Use
Preliminary Datasheet
R07DS0104EJ0300
(Previous: REJ03G0304-0200)
Rev.3.00
Sep 13, 2010
Features
IT (RMS) : 10 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note5
Viso : 2000 V
Outline
Insulated Type
Planar Passivation Type
UL Recognised : Yellow Card No. E223904
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F)
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, hair drier, control of household equipment such as
TV sets, stereo systems, refrigerator, washing machine, infrared kotatsu, carpet, small motor control, solid state relay,
copying machine, electric tool, electric heater, solenoid driver, and other general controlling devices
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
www.DataSheet.in
Page 1 of 7


Renesas Electronics Components Datasheet

BCR10PM-12LA Datasheet

Triac

No Preview Available !

BCR10PM-12LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
10
100
41.6
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
2000
Preliminary
Unit
A
A
A2s
W
W
V
A
C
C
g
V
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 85C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2




IDRM
VTM
VFGT
VRGT
VRGT
IFGT
IRGT
IRGT
— 2.0 mA Tj = 125C, VDRM applied
— 1.5
V Tc = 25C, ITM = 15 A,
Instantaneous measurement
— 1.5 V Tj = 25C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
30Note5
mA Tj = 25C, VD = 6 V, RL = 6 ,
30Note5
mA RG = 330
30Note5
mA
Gate non-trigger voltage
Thermal resistance
VGD 0.2 — — V Tj = 125C, VD = 1/2 VDRM
Rth (j-c)
3.5 C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
— V/s Tj = 125C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 5.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0104EJ0300 Rev.3.00
Sep 13, 2010
www.DataSheet.in
Page 2 of 7


Part Number BCR10PM-12LA
Description Triac
Maker Renesas Technology
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