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Renesas Electronics Components Datasheet

BCR16LM-12LB Datasheet

Triac

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BCR16LM-12LB
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III : 30 mA
Viso : 1800 V
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
1
23
Preliminary
REJ03G1805-0100
Rev.1.00
Jul 22, 2009
The Product guaranteed maximum junction
temperature 150°C
Insulated Type
Planar Passivation Type
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, copying machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
16
160
106.5
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A2s
W
W
V
A
°C
°C
g
V
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 87°C
60 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1 T2 G terminal to case
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 1 of 7


Renesas Electronics Components Datasheet

BCR16LM-12LB Datasheet

Triac

No Preview Available !

BCR16LM-12LB
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Gate trigger voltageNote2
Gate trigger curentNote2
Ι VFGTΙ
ΙΙ VRGTΙ
ΙΙΙ VRGTΙΙΙ
Ι IFGTΙ
ΙΙ IRGTΙ
ΙΙΙ IRGTΙΙΙ
Min.
Typ.
Max.
2.0
1.5
1.5
1.5
1.5
30
30
30
Unit
mA
V
V
V
V
mA
mA
mA
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25 A,
instantaneous measurement
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
Tj = 25°C, VD = 6 V, RL = 6 ,
RG = 330
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltageNote4
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125°C/150°C, VD = 1/2 VDRM
3.5 °C/W Junction to caseNote3
— V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = –8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G1805-0100 Rev.1.00 Jul 22, 2009
Page 2 of 7


Part Number BCR16LM-12LB
Description Triac
Maker Renesas Technology
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