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Renesas Electronics Components Datasheet

BCR5PM-14LD Datasheet

Triac

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BCR5PM-14LD
Triac
Medium Power Use
Features
IT (RMS) : 5 A
VDRM : 700 V
IFGTI , IRGTI, IRGT III : 50 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003AA-A
(Package name: TO-220F )
Preliminary Datasheet
R07DS0139EJ0200
(Previous: REJ03G1563-0100)
Rev.2.00
Sep 17, 2010
The product guaranteed maximum junction
temperature 150C.
Insulated Type
Planar Type
UL Recognized: Yellow Card No. E223904
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Motor control, heater control
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Symbol
IT (RMS)
ITSM
I2t
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Notes: 1. Gate open.
Symbol
VDRM
VDSM
Ratings
5
30
3.7
5
0.5
10
2
– 40 to +150
– 40 to +150
2.0
2000
Voltage class
Unit
14
700
V
800
V
Unit
Conditions
A
Commercial frequency, sine full wave
360conduction, Tc = 107C
A
60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
C
C
g
Typical value
V
Ta = 25C, AC 1 minute,
T1·T2·G terminal to case
R07DS0139EJ0200 Rev.2.00
Sep 17, 2010
Page 1 of 7


Renesas Electronics Components Datasheet

BCR5PM-14LD Datasheet

Triac

No Preview Available !

BCR5PM-14LD
Preliminary
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
2.0
mA Tj = 125C, VDRM applied
On-state voltage
VTM
1.8
V
Tc = 25C, ITM = 7 A,
Instantaneous measurement
Gate trigger voltageNote2
VFGT
1.5
V
Tj = 25C, VD = 6 V, RL = 6 ,

VRGT
1.5
V
RG = 330

VRGT
1.5
V
Gate trigger currentNote2
IFGT
50
mA Tj = 25C, VD = 6 V, RL = 6 ,

IRGT
50
mA RG = 330

IRGT
50
mA
Gate non-trigger voltage
Thermal resistance
VGD
0.2
V
Tj = 125C, VD = 1/2 VDRM
Rth (j-c)
5.2
C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
5
commutating voltageNote4
V/s Tj = 125C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS0139EJ0200 Rev.2.00
Sep 17, 2010
Page 2 of 7


Part Number BCR5PM-14LD
Description Triac
Maker Renesas Technology
PDF Download

BCR5PM-14LD Datasheet PDF






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