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Renesas Electronics Components Datasheet

BCR8CS-12LA Datasheet

Triac

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BCR8CS-12LA
Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 600 V
www.DataSheet4U.cIFoGmTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
REJ03G0338-0300
Rev.3.00
Nov 30, 2007
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
4
2, 4
1
23
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Solid state relay, hybrid IC
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G0338-0300 Rev.3.00 Nov 30, 2007
Page 1 of 6


Renesas Electronics Components Datasheet

BCR8CS-12LA Datasheet

Triac

No Preview Available !

BCR8CS-12LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
www.DataSheeMt4Uas.csom
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
1.2
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 105°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Ι
ΙΙ
Gate trigger currentNote2
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
(dv/dt)c
0.2
10
— 2.0 mA Tj = 125°C, VDRM applied
— 1.5 V Tc = 25°C, ITM = 12 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
30Note6
mA Tj = 25°C, VD = 6 V, RL = 6 ,
30Note6
mA RG = 330
30Note6
mA
— — V Tj = 125°C, VD = 1/2 VDRM
— 2.0 °C/W Junction to caseNote3 Note4
— — V/µs Tj = 125°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G0338-0300 Rev.3.00 Nov 30, 2007
Page 2 of 6


Part Number BCR8CS-12LA
Description Triac
Maker Renesas Technology
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BCR8CS-12LA Datasheet PDF






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