BCR8CS-12LA Datasheet | Renesas

Features - IT (RMS) : 8 A - VDRM : 600 V .. - IFGTI, IRGTI, IRGT III : 30 m A (20 m A)Note6 - Non-Insulated Type - Planar Passivation Type Outline RENESAS Package code: PRSS0004AB-A (Package name: TO-220S) 4 2, 4 1. 2. 3. 4. T1 Terminal T2 Terminal Gate Terminal T2 Terminal 3 2 3 1 Applications Solid state relay, hybrid IC Maximum Ratings Parameter Repetitive peak off-state voltage Note1 Non-repetitive peak off-state voltage Note1 Symbol VDRM VDSM Voltage class 12 600 720 Unit V V REJ03G0338-0300 Page 1 of 6 Rev.3.00 Nov 30, 2007 Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass .. Notes: 1. Gate open. Symbol IT (RMS) ITSM I2 t PGM PG (AV) VGM IGM Tj Tstg - Ratings 8 80 26 5 0.5 10 2 - 40 to +125 - 40 to +125 1.2 Unit A A A2s W W V A °C °C g Conditions mercial frequency, sine full wave Note3 360° conduction, Tc = 105°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Typical value Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Gate trigger voltage Note2 Ι ΙΙ ΙΙΙ Ι ΙΙ ΙΙΙ Symbol IDRM VTM VFGTΙ VRGTΙ VRGTΙΙΙ IFGTΙ IRGTΙ IRGTΙΙΙ VGD Rth (j-c) (dv/dt)c Min. - - - - - - - - 0.2 - 10 Typ. - - - - - - - - - - - Max. 2.0 1.5 1.5 1.5 1.5 30Note6 30Note6 30Note6 - 2.0 - Unit m A V V V V m A m A m A V °C/W V/µs Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 12 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2 VDRM Junction to case Note3 Note4 Tj = 125°C Gate trigger current Note2 Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state Note5 mutating voltage Notes: 2. 3. 4. 5. 6. Measurement using the gate trigger characteristics measurement circuit. Case temperature is...