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Renesas Electronics Components Datasheet

BCR8CS-12LB Datasheet

Triac

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BCR8CS-12LB
Triac
Medium Power Use
(The product guaranteed maximum junction temperature of 150°C)
Features
www.DataSheet4U.cITom(RMS) : 8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
Non-Insulated Type
Planar Passivation Type
REJ03G0468-0300
Rev.3.00
Nov 30, 2007
RENESAS Package code: PRSS0004AB-A
(Package name: TO-220S)
4
2, 4
1
23
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Solid state relay, hybrid IC
Warning
1. Refer to the recommended circuit values around the triac before using.
2. Be sure to exchange the specification before using. Otherwise, general triacs with the maximum
junction temperature of 125°C will be supplied.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G0468-0300 Rev.3.00 Nov 30, 2007
Page 1 of 7


Renesas Electronics Components Datasheet

BCR8CS-12LB Datasheet

Triac

No Preview Available !

BCR8CS-12LB (The product guaranteed maximum junction temperature of 150°C)
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
www.DataSheeMt4Uas.csom
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
1.2
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 130°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min. Typ. Max. Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
— 2.0 mA Tj = 150°C, VDRM applied
— 1.5 V Tc = 25°C, ITM = 12 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
— 30Note6 mA Tj = 25°C, VD = 6 V, RL = 6 ,
— 30Note6 mA RG = 330
30Note6
mA
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltageNote5
VGD
Rth (j-c)
(dv/dt)c
0.2/0.1
10/1
— V Tj = 125°C/150°C, VD = 1/2 VDRM
2.0 °C/W Junction to caseNote3 Note4
— V/µs Tj = 125°C/150°C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured on the T2 tab.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G0468-0300 Rev.3.00 Nov 30, 2007
Page 2 of 7


Part Number BCR8CS-12LB
Description Triac
Maker Renesas Technology
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BCR8CS-12LB Datasheet PDF






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