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Renesas Electronics Components Datasheet

BCR8PM-12LE Datasheet

Triac

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BCR8PM-12LE
600V – 8A - Triac
Medium Power Use
Features
IT (RMS) : 8 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA
Viso : 1500 V
Outline
RENESAS Package code: PRSS0003AA-B
(Package name: TO-220F(2) )
Preliminary Datasheet
R07DS1240EJ0300
(Previous: REJ03G1259-0200)
Rev.3.00
Dec 24, 2014
Insulated Type
Planar Passivation Type
UL Applying
12 3
2
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
Applications
Switching mode power supply, light dimmer, electronic flasher unit, control of household equipment such as TV sets,
stereo systems, refrigerator, washing machine, infrared kotatsu, and carpet, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
R07DS1240EJ0300 Rev.3.00
Dec 24, 2014
Page 1 of 7


Renesas Electronics Components Datasheet

BCR8PM-12LE Datasheet

Triac

No Preview Available !

BCR8PM-12LE
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Viso
Ratings
8
80
26
5
0.5
10
2
– 40 to +125
– 40 to +125
2.0
1500
Preliminary
Unit
Conditions
A Commercial frequency, sine full wave
360° conduction, Tc = 82°C
A 60Hz sinewave 1 full cycle, peak value,
non-repetitive
A2s Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
A
°C
°C
g
Typical value
V Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
IDRM
On-state voltage
VTM
Gate trigger voltageNote2
Ι
VFGTΙ
ΙΙ
VRGTΙ
ΙΙΙ
VRGTΙΙΙ
Gate trigger currentNote2
Ι
IFGTΙ
ΙΙ
IRGTΙ
ΙΙΙ
IRGTΙΙΙ
2.0
mA Tj = 125°C, VDRM applied
1.6
V
Tc = 25°C, ITM = 12 A,
Instantaneous measurement
1.5
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
1.5
V
RG = 330 Ω
1.5
V
30
mA Tj = 25°C, VD = 6 V, RL = 6 Ω,
30
mA RG = 330 Ω
30
mA
Gate non-trigger voltage
VGD
0.2
V
Tj = 125°C, VD = 1/2 VDRM
Thermal resistance
Rth (j-c)
4.3
°C/W Junction to caseNote3
Critical-rate of rise of off-state
(dv/dt)c
10
V/μs Tj = 125°C
commutating voltageNote4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 4.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1240EJ0300 Rev.3.00
Dec 24, 2014
Page 2 of 7


Part Number BCR8PM-12LE
Description Triac
Maker Renesas Technology
PDF Download

BCR8PM-12LE Datasheet PDF






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