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Renesas Electronics Components Datasheet

GN4030V5AB Datasheet

IGBT

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Merits
Power MOSFETs and IGBT for PDP
Power MOSFET
Low ON resistance
Low Qg
High avalanche tolerance
IGBT
Low VCE (sat)
High-speed switching
April 2010
Renesas Electronics
PDP System
Y
Sustain
circuit
Panel
Addressing IC
TV/PC
Signal
PDP
Signal
processing
X
Sustain
circuit
Timing
control
Power
supply
PDP trends
Power device
High Intensity
High breakdown
voltage
High pressure Gas
High Efficiency
Low resistance
High speed switching
Low Cost
Optimum FET
Wide MOSFET
line-ups
IGBT
High Speed IGBT
Product Lineup
Power MOSFET
P/N
H7N1005LS
H7N1004LS
H5N2301PF
H5N2306PF
H5N2305PF
H5N2509P
H5N2503P
H5N3004P
H5N3007LS
H5N3003P
H5N3504P
VDSS
(V)
100
100
230
230
230
250
250
300
300
300
350
Maximum Rating
ID
(A)
15
30
25
30
35
30
50
25
25
40
20
VGS
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Characteristics
VGS(off)
RDS(on)
typ(V)
typ(m
2.0 85
2.0 25
3.5 65
3.5 48
3.5 30
3.5 53
3.5 40
3.5 75
2.8 120
3.5 60
3.5 100
Package
LDPAK
LDPAK
TO-3PFM
TO-3PFM
TO-3PFM
TO-3PFM
TO-3P
TO-3P
LDPAK
TO-3P
TO-3P
IGBT (High-speed type)
P/N
GN4030V5AB
GN6030V5AB
RJP3053DPP
RJP3063DPP
RJP3054DPP
RJP3064DPP
RJP3055DPP
RJP3065DPP
RJP4065DPP
RJP2557DPK
RJP3056DPK
RJP3057DPK
RJP3066DPK
RJP3067DPK
RJP4067DPK
VCES
(V)
400
600
300
300
300
300
300
300
400
270
300
300
300
300
400
Maximum Rating
IC
(A)
30
30
30
30
35
35
40
40
40
50
45
50
45
50
50
VGE
(V)
±20
±20
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
±30
Electrical Charcteristics
VCE(sat)
tf
(V) typ
(μS)  typ
1.5 0.12
1.7 0.12
2.0 0.15
1.7 0.30
1.8 0.15
1.5 0.30
1.8 0.15
1.5 0.3
1.6 0.3
1.6 0.15
1.6 0.15
1.6 0.15
1.4 0.3
1.4 0.3
1.7 0.35
Package
TO-220AB
TO-220AB
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-220FN
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
TO-3P
©2010. Renesas Electronics Corporation, All rights reserved.
Free Datasheet http://www.datasheet4u.com/


Renesas Electronics Components Datasheet

GN4030V5AB Datasheet

IGBT

No Preview Available !

April 2010
Renesas Electronics
Power MOSFETs for Backlight Inverter
Achieve Miniaturization and Higher Efficiency
Features
Low on resistance, High-speed switching
Low Qg, Low Qgd
Small package, Built-in 2 elements
Merits
High efficiency
Mniaturization
Example of Application Circuit (LCD TV, TFT Monitor, Note PC)
Full Bridge
Vin Pch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
Half Bridge
Vin
Pch
HAT3029R(30V)
HAT3031R(60V)
Nch&Pch in 1PKG
HRV103A
Nch
Push/Pull
Vin
Nch
Vds(peak)=Vin + V(surge)
HRV103A
Nch
Vds(peak)=Vin + V(surge)
Nch
HAT2215R(80V)
Dual Nch in 1PKG
Vds(peak)=2Vin + V(surge)
Product Lineup
No Type No
1 HAT2199R
2 HAT2208R
3 HAT2256R
4 HAT1131R
5 HAT1132R
6 HAT2276R
7 HAT2280R
8 HAT2275R
9 HAT2215R
10 HAT1126R
11 HAT3029R
Single
Nch+Nch
Pch+Pch
12 HAT3037R
13 HAT3010R
14 HAT3031R
15 HAT3038R
16 HAT3021R
17 HAT3019R
Nch+Pch
Max.Ratings
VDSS
V)
30
30
60
-30
-30
VGs s
V)
±20
±20
±20
±20
±20
30 ±20
ID
A)
11
9
8
-9
-7
7.5
30 ±20
6
60 ±20 6.6
80 ±20 3.4
-60
30
-30
45
-45
60
-60
60
-60
60
-60
80
-80
100
-100
±20
±20
+10/-20
±20
+10/-20
±20
±20
±20
+10/-20
±20
±20
±20
±20
±20
±20
6
6
-6
5
-3.8
6
-5
6.6
-3.4
5
-3.8
3.4
-2.6
3.5
-2.3
©2010. Renesas Electronics Corporation, All rights reserved.
RDS(on) (m)
VGS=4.5v(8v)
VGS=10v
Qgd Qg
typ max typ max (nc) nC)
17
25
13 16.5 1.8
7.5
24 35 18 23 1.1 4.4
28 41 24 30 3.2 10
21.5
31
15
19 5.8
17
27.5
40
20
25 5.2 11.5
27 40 19 24 1.2 4.6
40 58
27 34 1.1
3
29 43 25 32 3.2 10
100 145 88 115 1.3 7.3
60 85 40 50 8 37
40 58 27 34 1.1 3.1
36 53 25 32 4.4 11.5
55 75 44 55 0.9 3.0
95 130 75
95 1.5 4.9
32 45 25 32 8 18
90 130 60
76
8
18
29 43 25 32 2.8 10
120 175 95 120 2.2 6.0
55 80 48 60 1.4
-
90 130 80 100 2.8
-
100 145 90 115 1.3 7.3
200 290 165 210 2.4
16
120 160
90 115 3.2
15
300 500 240 300 3.1
16
Free Datasheet http://www.datasheet4u.com/


Part Number GN4030V5AB
Description IGBT
Maker Renesas Technology
Total Page 2 Pages
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