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Renesas Electronics Components Datasheet

H5N2305PF Datasheet

Silicon N Channel MOSFET High Speed Power Switching

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H5N2305PF
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
Low leakage current
www.DataSheet4U.cHoimgh speed switching
Outline
TO-3PFM
D
G
S
REJ03G0026-0200Z
Rev.2.00
Jun.25.2004
1
23
1. Gate
2. Drain
3. Source
Rev.2.00, Jun.25.2004, page 1 of 9


Renesas Electronics Components Datasheet

H5N2305PF Datasheet

Silicon N Channel MOSFET High Speed Power Switching

No Preview Available !

H5N2305PF
Absolute Maximum Rating
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body-drain diode reverse drain
current
Body-drain diode reverse drain
peak current
Avalanche current
www.DataSheetC4Uha.cnonmel dissipation
IDR
IDR
Note1
(pulse)
IAP Note3
Pch Note2
Channel to case thermal impedance θch-c
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Rating
230
±30
35
140
35
140
18
60
2.08
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
W
°C /W
°C
°C
Rev.2.00, Jun.25.2004, page 2 of 9


Part Number H5N2305PF
Description Silicon N Channel MOSFET High Speed Power Switching
Maker Renesas Technology
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