H5N2503P Datasheet | Renesas

Features .. - Low - Low on-resistance: R DS (on) = 0.04 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) - High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) - Low gate charge: Qg = 140 n C typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) - Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source Rev.2.00 Sep 07, 2005 page 1 of 6 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance .. Channel temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 250 ±30 50 200 50 200 50 150 0.833 150 - 55 to +150 Unit V V A A A A A W °C/W °C °C IDR (pulse) Note 3 IAP Pch θ ch-c Tch Tstg Note 1 Note 2 Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Symbol V (BR) DSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd VDF trr Qrr Min 250 - - 3.0 - 25 - - - - - - - - - - - - - Typ - -...