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H5N2507P - High Speed Power Switching MOSFET

General Description

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Key Features

  • Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C).
  • Low leakage current.
  • High speed switching.
  • Low gate charge.
  • Built-in fast recovery diode Outline.

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Datasheet Details

Part number H5N2507P
Manufacturer Renesas
File Size 120.73 KB
Description High Speed Power Switching MOSFET
Datasheet download datasheet H5N2507P Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.