H5N2507P Datasheet - Renesas Technology

High Speed Power Switching MOSFET

H5N2507P Features

* Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)

* Low leakage current

* High speed switching

* Low gate charge

* Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P ) 4 1 2 3 Absolute Maximum Ratings Item Dr

H5N2507P General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

H5N2507P Datasheet (120.73 KB)

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Datasheet Details

Part number:

H5N2507P

Manufacturer:

Renesas ↗ Technology

File Size:

120.73 KB

Description:

High speed power switching mosfet.

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H5N2507P High Speed Power Switching MOSFET Renesas Technology

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H5N2507P Features

H5N2507P General Description

Datasheet Details

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