Part number:
H5N2522FP-E0-E
Manufacturer:
Renesas ↗ Technology
File Size:
92.71 KB
Description:
High speed power switching mos fet.
H5N2522FP-E0-E Datasheet (92.71 KB)
* Low on-resistance RDS(on) = 0.13 typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching
* Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to Source voltage G
H5N2522FP-E0-E Datasheet (92.71 KB)
H5N2522FP-E0-E
Renesas ↗ Technology
92.71 KB
High speed power switching mos fet.
📁 Related Datasheet
H5N2522FN Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2522LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2521FN Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2501LD Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2501LM Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2501LS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2502CF Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2503P Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2504DL Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
H5N2504DS Silicon N Channel MOS FET High Speed Power Switching (Renesas Technology)
