H7N0312AB
H7N0312AB is Silicon N-Channel MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS (on) = 2.6 mΩ typ.
- Low drive current
- 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
REJ03G1127-0400 (Previous: ADE-208-1571B)
Rev.4.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol VDSS VGSS ID
ID (pulse) Note 1 IDR
Pch Note 2 θ ch-c Tch Tstg
Value 30 ±20 85 340 85 125 1.0 150
- 55 to +150
(Ta = 25°C) Unit
V V A A A W °C/W °C °C
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V (BR) DSS V (BR) GSS
IGSS IDSS VGS (off) RDS (on)
|yfs| Ciss Coss Crss
- -
±20
- -
- - ±10
- -
-...
