H7N0405LS Datasheet | Renesas

Features - Low on-resistance RDS(on) = 4.0 mΩ typ. .. - Low drive current. - Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 3 1. Gate 2. Drain 3. Source 4. Drain H7N0405LD RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G H7N0405LM Rev.1.00 Sep 25, 2006 page 1 of 7 H7N0405LD, H7N0405LS, H7N0405LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature .. Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 Pch Note2 Tch Tstg Rating 40 ±20 80 320 80 40 213 80 150 - 55 to +150 Unit V V A A A A m J W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer admittance Total gate charge Gate to source charge Gate to drain charge Turn-off delay time Rise time Body-drain diode forward voltage Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 40 ±20 - - 1.5 - - 54 - - - - - - - - - - - - Typ - - - - - 4.0 6.2 90 5600 825 550 100 25 25 40 400 100 26 0.94 40 Max - - ±10 10 2.5 5.0 8.7 - - - -...