Datasheet4U Logo Datasheet4U.com

H7N0602AB - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 4.1 mΩ typ.
  • Low drive current.
  • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150.
  • 55 to +150 Unit V.

📥 Download Datasheet

Datasheet Details

Part number H7N0602AB
Manufacturer Renesas
File Size 145.07 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0602AB Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H7N0203AB Silicon N-Channel MOSFET Renesas
H7N0307AB Silicon N-Channel MOSFET Hitachi
H7N0307AB Silicon N-Channel MOSFET Renesas
H7N0307L Silicon N-Channel MOSFET Hitachi
H7N0307LD Silicon N-Channel MOSFET Renesas

Other Datasheets by Renesas

Part Number Description
H7N0602LD Silicon N-Channel MOSFET
H7N0602LM Silicon N-Channel MOSFET
H7N0602LS Silicon N-Channel MOSFET
H7N0603DL Silicon N-Channel MOSFET
H7N0603DS Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7N0602AB Silicon N Channel MOS FET High Speed Power Switching REJ03G0068-0200Z Rev.2.00 Oct.30.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 4.1 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline TO-220AB D G S 1 2 3 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Oct.30.2003, page 1 of 9 H7N0602AB Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 85 340 85 65 362 100 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1.