H7N0602LM Datasheet | Renesas

Features - Low on-resistance RDS (on) = 4.1 mΩ typ. .. - 4.5 V gate drive devices - High Speed Switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 4 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0602LD H7N0602LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 G Rev.6.00 Oct 16, 2006 page 1 of 8 H7N0602LD, H7N0602LS, H7N0602LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature .. Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IAP Note 3 EAR Note 3 Pch Note 2 Tch Tstg Value 60 ±20 85 340 85 65 362 100 150 - 55 to +150 Unit V V A A A A m J W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IDSS IGSS VGS (off) |yfs| RDS (on) Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 60 ±20 - - 1.5 70 - - - - - - - - - - - - - - Typ - - - - - 120 4.1 6.2 9000 1000 470 140 30 30 55 290 140 50 0.95 45 Max - - 10 ±10 2.5 - 5.2 9.0 - - - - - - - - - - - - Unit V V µA µA V S mΩ mΩ p F p F p F n C n C n C ns ns ns ns V ns Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VDS = 60 V, VGS = 0 VGS =...