H7N0607DS Datasheet | Renesas

Features - Low on-resistance RDS(on) = 26 mΩ typ. .. - Low drive current. - Capable of 4.5 V gate drive Outline PRSS0004ZD-B PRSS0004ZD-C (Previous code: DPAK(L)-2) (Previous code: DPAK-(S)) D 4 4 G 1 2 S 1 2 3 3 1. Gate 2. Drain 3. Source 4. Drain H7N0607DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID (pulse)Note1 IDR Note3 IAP EAR Note3 Pch Note2 Tch Tstg Rating 60 ±20 20 80 20 8 5.48 25 150 - 55 to +150 Unit V V A A A A mj W °C °C Rev.3.00, Jan.27.2005, page 1 of 8 H7N0607DL, H7N0607DS Electrical Characteristics (Ta = 25°C) Item Drain to source break down voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cut off voltage Static drain to source on state resistance Forward transfer admittance Input capacitance .. Output capacitance Reverse transfer admittance Total gate charge Gate to source charge Gate to drain charge Turn-off delay time Rise time Body-drain diode forward voltage Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 60 ±20 - - 1.5 - - 11 - - - - - - - - - - - - Typ - - - - - 26 40 18 1100 160 90 21 4 5 20 90 65 15 0.93 25 Max - - ±10 10 2.5 34 56 - - - - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F n C n C n C ns ns ns ns V ns Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 m A, VDS = 10 V ID = 10 A, VGS = 10 VNote4 ID = 10 A, VGS = 4.5 VNote4 ID = 10 A, VDS = 10 VNote4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 10 V ID = 20 A...