H7N0608AB
H7N0608AB is Silicon N-Channel MOSFET manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 6.0 mΩ typ.
- Low drive current
- Available for 4.5 V gate drive
Outline
TO-220AB
1 2 3
1. Gate 2. Drain (Flange) 3. Source
Rev.1.00, Oct.30.2003, page 1 of 9
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
..
Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 ±20 70 280 70 40 137 80 150
- 55 to +150
Unit V V A A A A m J W °C °C
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature
EARNote3 Pch Tch Tstg
Note2
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Oct.30.2003, page 2 of 9
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ
- -
- -
- 6.0 8.0 75 6200 680 350 100 20 20 45 220 125 35 0.94 40 Max
- - ±10 10 2.5 8.0 12
- -
- -
- -
- -
- -
- -
- Unit V V µA µA V mΩ mΩ S p F p F p F n C n C n C ns ns ns ns V ns IF = 70 A, VGS = 0 IF = 70 A, VGS = 0 di F/dt = 100 A/µs Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 m A, VDS = 10 VNote1 ID = 35 A, VGS = 10 VNote1 ID = 35 A, VGS = 4.5 VNote1 ID = 35 A, VGS = 10 VNote1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 70 A VGS = 10 V, ID = 35 A RL = 0.86 Ω Rg = 4.7...