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H7N0608FM - Silicon N-Channel MOSFET

Key Features

  • Low on-resistance RDS(on) = 6.5 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can be driven from 5 V source Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Dec.04.2003, page 1 of 9 H7N0608FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 50 200 50 40 137 30 150.
  • 55 to.

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Datasheet Details

Part number H7N0608FM
Manufacturer Renesas
File Size 141.64 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0608FM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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H7N0608FM Silicon N Channel MOS FET Power Switching REJ03G0165-0100Z Rev.1.00 Dec.04.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 6.5 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Dec.04.2003, page 1 of 9 H7N0608FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 50 200 50 40 137 30 150 –55 to +150 Unit V V A A A A mJ W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1.