H7N0608FM Datasheet | Renesas

Features - Low on-resistance RDS(on) = 6.5 mΩ typ. - Low drive current - 4.5 V gate drive device can be driven from 5 V source Outline TO-220FM 1 2 S 1. Gate 2. Drain 3. Source Rev.1.00, Dec.04.2003, page 1 of 9 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current .. Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note1 Ratings 60 ±20 50 200 50 40 137 30 150 - 55 to +150 Unit V V A A A A m J W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature EARNote3 Pch Tch Tstg Note2 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Dec.04.2003, page 2 of 9 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ - - - - - 6.5 8.5 60 6200 680 350 100 20 20 45 160 125 32 0.92 40 Max - - ±10 10 2.5 8.5 13 - - - - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F n C n C n C ns ns ns ns V ns Test Conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 60 V, VGS = 0 ID = 1 m A, VDS = 10 VNote4 ID = 20 A, VGS = 10 VNote4 ID = 20 A, VGS = 4.5 VNote4 ID = 20 A, VGS = 10 VNote4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 25 V VGS = 10 V ID = 50 A VGS = 10 V, ID = 20 A VDD ≅ 30 V RL = 1.5 Ω Rg = 4.7 Ω IF = 50 A, VGS = 0 IF = 50 A, VGS = 0 di F/dt = 100...