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H7N0608LD - Silicon N-Channel MOSFET

Download the H7N0608LD datasheet PDF. This datasheet also covers the H7N0608L variant, as both devices belong to the same silicon n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 6.0 mΩ typ.
  • Low drive current.
  • Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.2003, page 1 of 11 H7N0608LD, H7N0608LS, H7N0608LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalan.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N0608L_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N0608LD
Manufacturer Renesas
File Size 144.49 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet H7N0608LD Datasheet

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Other Datasheets by Renesas

Part Number Description
H7N0608L Silicon N-Channel MOSFET
H7N0608LM Silicon N-Channel MOSFET
H7N0608LS Silicon N-Channel MOSFET
H7N0608AB Silicon N-Channel MOSFET
H7N0608FM Silicon N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com H7N0608LD, H7N0608LS, H7N0608LM Silicon N Channel MOS FET High Speed Power Switching REJ03G0144-0100Z Rev.1.00 Oct.30.2003 Features • Low on-resistance RDS(on) = 6.0 mΩ typ. • Low drive current • Available for 4.5 V gate drive Outline LDPAK D 4 4 4 G 1 S 1 2 1 3 2 3 2 H7N0608LS H7N0608LM 3 H7N0608LD 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Oct.30.