H7N0608LS
H7N0608LS is Silicon N-Channel MOSFET manufactured by Renesas.
- Part of the H7N0608L comparator family.
- Part of the H7N0608L comparator family.
Features
- Low on-resistance RDS(on) = 6.0 mΩ typ.
- Low drive current
- Available for 4.5 V gate drive
Outline
LDPAK
G 1 S
1 3
H7N0608LS H7N0608LM
H7N0608LD
1. Gate 2. Drain 3. Source 4. Drain
Rev.1.00, Oct.30.2003, page 1 of 11
H7N0608LD, H7N0608LS, H7N0608LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note1
Ratings 60 ±20 70 280 70 40 137 80 150
- 55 to +150
Unit V V A A A A m J W °C °C
EARNote3 Pch Tch Tstg
Note2
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Oct.30.2003, page 2 of 11
H7N0608LD, H7N0608LS, H7N0608LM
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS 60 Typ
- -
- -
- 6.0 8.0 75 6200 680 350 100 20 20 45 220 125 35 0.94 40 Max
- - ±10 10 2.5 8.0 12
- -...
