HAT1035R - Silicon P-Channel Power MOSFET

Renesas

Key Features

Low on-resistance.
Capable of.
4 V gate drive.
Low drive current.
High density mounting Outline.

HAT1035R silicon p-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT1035R
Manufacturer	Renesas
File Size	49.33 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1035R Datasheet

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Full PDF Text Transcription (Reference)

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HAT1035R Silicon P Channel Power MOS FET High Speed Power Switching Features • Low on-resistance • Capable of –4 V gate drive • Low drive current • High density mounting Outline RENESAS Package code: PRSP0008DD-D (Package name: SOP-8) 78 56 DD DD 8 7 65 2 4 1 234 G G S1 MOS1 S3 MOS2 REJ03G0845-0100 Rev.1.00 Apr.22,2005 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain Absolute Maximum Ratings Item Symbol Ratings Drain to Source voltage VDSS –150 Gate to Source voltage VGSS ±15 Drain current Drain peak current ID ID(pulse)Note1 –0.25 –1 Body-Drain diode reverse Drain current Channel dissipation Channel dissipation IDR Pch Note2 Pch Note3 –0.25 1 1.5 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.