HAT1055R - Silicon P-Channel Power MOSFET

Renesas

Key Features

Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive.

HAT1055R silicon p-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT1055R
Manufacturer	Renesas
File Size	149.04 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1055R Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
HAT1000-S	Current Transducer	LEM
HAT1000-S	(HAT200-S - HAT1500-S) Current Transducer	LEM
HAT1016R	Silicon P-Channel Power MOSFET	Hitachi Semiconductor
HAT1016R	Silicon P-Channel Power MOSFET	Renesas
HAT1020R	Silicon P-Channel Power MOSFET	Hitachi Semiconductor

Other Datasheets by Renesas

Part Number	Description
HAT1055RJ	Silicon P-Channel Power MOSFET
HAT1054R	Silicon P-Channel Power MOSFET
HAT1035R	Silicon P-Channel Power MOSFET
HAT1041T	Silicon P-Channel Power MOSFET
HAT1047R	Silicon P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

HAT1055R, HAT1055RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0067-0100Z Rev.1.00 Aug.29.2003 www.DataSheet4U.com Features • • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage guarantee Avalanche rating Outline SOP-8 8 5 7 6 3 1 2 7 8 D D 5 6 D D 4 2 G 4 G S1 S3 1, 3 Source 2, 4 Gate 5, 6, 7, 8 Drain MOS1 MOS2 Rev.1.00, Aug.29.2003, page 1 of 9 HAT1055R, HAT1055RJ Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings HAT1055R Drain to source voltage Gate to source voltage Drain current www.DataSheet4U.com Unit HAT1055RJ –60 ±20 –5 –40 –5 2.